JST137 Series
JieJie Microelectronics CO. , Ltd
FIG.1 Maximum power dissipation versus RMS
FIG.2: RMS on-state current versus case
on-state current
temperature
IT(RMS) (A)
12
P(w)
15
α=180°
10
TO-220C/
TO-251/TO-252
TO-220B(Non-Ins)
10
5
8
TO-220F(Ins)
6
4
2
IT(RMS) (A)
Tc (℃)
0
0
0
0
2
4
6
8
10
25
50
75
100
125
FIG.3: Surge peak on-state current versus
FIG.4: On-state characteristics (maximum
number of cycles
values)
ITM (A)
ITSM (A)
70
70
60
50
40
30
t=20ms
One cycle
Tj=Tjmax
10
20
Tj=25℃
10
0
VTM (V)
Number of cycles
100
1
0
1
2
3
4
5
1
10
1000
FIG.6: Relative variations of gate trigger current
versus junction temperature
FIG.5: Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<20ms, and
corresponging value of I2t (dI/dt < 50A/μs)
ITSM (A), I2 t (A2 s)
IGT(Tj) /IGT(Tj=25℃)
3.0
1000
2.5
2.0
IGT1
ITSM
IGT4
dI/dt
100
1.5
1.0
I2t
IGT3
0.5
0.0
IGT2
tp(ms)
Tj (℃)
10
0.01
-40 -20
0
20
40
60
80 100 120 140
0.1
1
10 20
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