JCT655/855 Series
JieJie Microelectronics CO. , Ltd
Critical rate of rise of on-state current
(IG=2×IGT)
dI/dt
150
A/μs
Peak gate current
IGM
PG(AV)
PGM
5
1
A
Average gate power dissipation
Peak gate power
W
W
10
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbol
Test Condition
Unit
MIN.
10
-
TYP.
MAX.
50
1.5
-
IGT
VGT
VGD
IL
15
-
mA
V
VD=12V RL=33Ω
VD=VDRM Tj=125℃ RL=3.3KΩ
IG=1.2IGT
0.2
-
-
V
-
100
80
-
mA
mA
V/μs
IH
IT=500mA
-
-
dV/dt
VD=2/3VDRM Gate Open Tj=125℃
700
-
STATIC CHARACTERISTICS
Symbol
Parameter
Value(MAX)
Unit
V
VTM
IDRM
IRRM
ITM=80A tp=380μs
Tj=25℃
1.6
10
6
Tj=25℃
μA
mA
VD=VDRM VR=VRRM
Tj=125℃
THERMAL RESISTANCES
Symbol
Parameter
TO-3P(Ins)
Value
0.65
0.6
Unit
Rth(j-c)
junction to case(AC)
℃/W
TO-247S /TO-247
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