JCT630/830 Series
JieJie Microelectronics CO. , Ltd
Average gate power dissipation
Peak gate power
PG(AV)
PGM
1
5
W
W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbol
Test Condition
Unit
MIN.
TYP.
MAX.
15
1.5
-
IGT
VGT
VGD
IL
-
-
-
-
-
-
-
-
mA
V
VD=12V RL=33Ω
VD=VDRM Tj=125℃ RL=3.3KΩ
IG=1.2IGT
0.2
-
V
50
30
-
mA
mA
V/μs
IH
IT=500mA
-
dV/dt
VD=2/3VDRM Gate Open Tj=125℃
500
STATIC CHARACTERISTICS
Symbol
Parameter
Tj=25℃
Value(MAX)
Unit
V
VTM
IDRM
IRRM
ITM=55A tp=380μs
1.55
10
1
Tj=25℃
μA
mA
VD=VDRM VR=VRRM
Tj=125℃
THERMAL RESISTANCES
Symbol
Parameter
Value
2.1
Unit
TO-220A
TO-220B
TO-220F
Rth(j-c)
junction to case(AC)
1.7
℃/W
3.4
ORDERING INFORMATION
J CT 6 30 A
JieJie Microelectronics Co.,Ltd
A:TO-220A
B:TO-220B F:TO-220F
SCRs
6:VDRM /VRRM ≥600V
8:VDRM /VRRM ≥800V
IT(RMS):30A
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