JCT1025/1225 Series
JieJie Microelectronics CO. , Ltd
Average gate power dissipation
Peak gate power
PG(AV)
PGM
1
5
W
W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbol
Test Condition
Unit
MIN.
TYP.
MAX.
40
1.3
-
IGT
VGT
VGD
IL
-
-
-
-
-
-
-
mA
V
VD=12V RL=33Ω
-
0.2
-
VD=VDRM Tj=125℃ RL=3.3KΩ
IG=1.2IGT
V
90
50
-
mA
mA
V/μs
IH
IT=500mA
-
dV/dt
VD=2/3VDRM Gate Open Tj=125℃
1000
STATIC CHARACTERISTICS
Symbol
Parameter
Value(MAX)
Unit
V
VTM
IDRM
IRRM
ITM=50A tp=380μs
Tj=25℃
1.6
10
4
Tj=25℃
μA
mA
VD=VDRM VR=VRRM
Tj=125℃
THERMAL RESISTANCES
Symbol
Parameter
Value
1.9
Unit
TO-220A/ TO-220F
TO-220B/ TO-220C
Rth(j-c)
junction to case(AC)
℃/W
1.0
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