ACJT2 Series
JieJie Microelectronics CO. , Ltd
Rate of rise of on-state current (IG =2×IGT)
Peak gate current
dI/dt
IGM
50
1
A/μs
A
Average gate power dissipation
Peak gate power
PG(AV)
PGM
0.1
1
W
W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbol
Test Condition
Quadrant
Unit
ACJT210 ACJT225
IGT
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅱ-Ⅲ
MAX
MAX
10
25
mA
V
VD=12V RL=33Ω
VGT
1.3
0.2
VD=VDRM Tj=125℃
RL=3.3KΩ
VGD
Ⅰ-Ⅱ-Ⅲ
MIN
V
Ⅰ-Ⅲ
25
35
50
60
IL
MAX
mA
IG=1.2IGT
Ⅱ
IH
IT=100mA
MAX
MIN
10
40
mA
dV/dt
VD=2/3VDRM Gate Open Tj=125℃
600
1000
V/μs
STATIC CHARACTERISTICS
Symbol
Parameter
Value(MAX)
Unit
V
VTM
IDRM
IRRM
ITM=2.8A tp=380μs
Tj=25℃
1.55
10
1
Tj=25℃
μA
mA
VD=VDRM VR=VRRM
Tj=125℃
THERMAL RESISTANCES
Symbol
Parameter
Value
4.5
Unit
TO-251/ TO-252
TO-92
11.2
5.8
SOT-223
SOT-89
℃/W
Rth(j-c)
junction to case(AC)
8.9
TO-220F(Ins)/
TO-220FP(Ins)
7.5
TEL：+86-513-83639777
- 2 / 7-
http://www.jjwdz.com
JIEJIE [ JIEJIE MICROELECTRONICS CO.,Ltd ]
