ACJT10 Series
FIG.1 Maximum power dissipation versus RMS
JieJie Microelectronics CO. , Ltd
FIG.2: RMS on-state current versus case
on-state current
temperature
IT(RMS) (A)
12
P(w)
15
α=180°
TO-220B(Non-Ins)
10
10
5
8
TO-220A(Ins)
6
4
TO-220F(Ins)
2
IT(RMS) (A)
Tc (℃)
0
0
0
0
2
4
6
8
10
25
50
75
100
125
FIG.3: Surge peak on-state current versus
FIG.4: On-state characteristics (maximum
number of cycles
values)
ITM (A)
24
ITSM (A)
105
90
75
60
45
30
t=20ms
One cycle
18
12
Tj=25℃
Tj=125℃
6
0
15
0
VTM (V)
Number of cycles
100
0
0.5
1.0
1.5
2.0
2.5
1
10
1000
FIG.6: Relative variations of holding current,
latching curretn versus junction temperature
FIG.5: Relative variations of gate trigger current
versus junction temperature
IH,IL(Tj) /IH,IL(Tj=25℃)
IGT(Tj) /IGT(Tj=25℃)
3.0
3.0
2.5
2.0
2.5
2.0
IH
IGT3
IGT1&IGT2
IL
1.5
1.0
1.5
1.0
0.5
0.0
0.5
0.0
Tj (℃)
40 60
Tj (℃)
40 60
-40 -20
0
20
80 100 120 140
-40 -20
0
20
80 100 120 140
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and replaces all information previously supplied.
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