ACJT10 Series
JieJie Microelectronics CO. , Ltd
Rate of rise of on-state current (IG=2×IGT)
Peak gate current
dIT/dt
IGM
50
2
A/μs
A
Average gate power dissipation
Peak gate power
PG(AV)
PGM
0.1
1
W
W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbol
Test Condition
Quadrant
Unit
ACJT1010 ACJT1035 ACJT1050
MAX
MAX
IGT
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅱ-Ⅲ
10
35
50
mA
V
VD=12V RL=33Ω
VGT
1.4
1.4
1.5
VD=VDRM Tj=125℃
RL=3.3KΩ
MIN
VGD
Ⅰ-Ⅱ-Ⅲ
0.2
V
Ⅰ-Ⅲ
20
35
20
70
80
50
80
100
70
MAX
IL
mA
IG=1.2IGT
Ⅱ
MAX
MIN
IH
IT=100mA
mA
VD=2/3VDRM Gate Open
Tj=125℃
dV/dt
500
1500
2000
V/μs
STATIC CHARACTERISTICS
Symbol
Parameter
Value(MAX)
Unit
V
VTM
IDRM
IRRM
ITM=14A tp=380μs
Tj=25℃
Tj=25℃
Tj=125℃
1.55
10
μA
mA
VD=VDRM VR=VRRM
1.5
THERMAL RESISTANCES
Symbol
Parameter
Value
3.1
Unit
TO-220A(Ins)
Rth(j-c)
junction to case(AC)
TO-220B(Non-Ins)
TO-220F(Ins)
2.3
℃/W
3.5
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