JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT -89
Plastic-Encapsulate
Transistors
D882
FEATURES
TRANSISTOR（ NPN
）
SOT-89
1.
BASE
2.
COLLECTOR
1
2
3.
EMITTER
3
Power dissipation
P
CM
: 0.75
W（Tamb=25℃）
MAXIMUM RATINGS* T
A
=25℃ unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Value
40
30
6
3
0.75
150
-55-150
Units
V
V
V
A
W
℃
℃
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE
（
1
）
h
FE
（
2
）
V
CE(sat)
V
BE(sat)
f
T
unless
Test
otherwise
specified）
TYP
MAX
UNIT
V
V
V
1
1
1
60
32
0.5
2
50
V
V
MHz
400
µA
µA
µA
40
30
6
conditions
MIN
Ic= 100
μ
A， I
E
=0
Ic= 10
mA， I
B
=0
I
E
= 100
μ
A， I
C
=0
V
CB
= 40
V
CE
= 30
V
EB
= 6
V
CE
= 2 V,
V， I
E
=0
V， I
B
=0
V， I
C
=0
I
C
= 1A
V
CE
= 2 V, I
C
= 100mA
I
C
= 2A, I
B
= 0.2 A
I
C
= 2A, I
B
= 0.2 A
V
CE
= 5V ,
f =10MHz
Ic=0.1A
CLASSIFICATION OF
Rank
Range
h
FE(1)
R
60-120
O
100-200
Y
160-320
GR
200-400
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
