JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT
-89-3L
Plastic-Encapsulate
Transistors
D882
FEATURES
Power dissipation
TRANSISTOR (NPN)
SOT-89-3L
1.
BASE
2.
COLLECTOR
3.
EMITTER
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
30
6
3
0.5
150
-55~150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS(T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
Test conditions
I
C
= 100μA, I
E
=0
I
C
= 10mA, I
B
=0
I
E
= 100μA, I
C
=0
V
CB
= 40V, I
E
=0
V
CE
= 30V, I
B
=0
V
EB
= 6V, I
C
=0
V
CE
=2V, I
C
= 1A
V
CE
=2V, I
C
= 100mA
I
C
= 2A, I
B
= 0.2 A
I
C
= 2A, I
B
= 0.2 A
V
CE
= 5V , Ic=0.1A
f =10MHz
50
60
32
0.5
1.5
V
V
MHz
Min
40
30
6
1
10
1
400
Typ
Max
Unit
V
V
V
µA
µA
µA
CLASSIFICATION OF h
FE(1)
Rank
Range
R
60-120
O
100-200
Y
160-320
GR
200-400
A,Jun,2011
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
