JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
D882
TRANSISTOR (NPN)
TO-126
FEATURES
Power
Dissipation
1. EMITTER
2. COLLECTOR
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
30
6
3
1.25
150
-55-150
Unit
V
V
V
A
W
℃
℃
3. BASE
ELECTRICAL CHARACTERISTICS (
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
T
a
=25
℃
unless otherwise specified)
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
BE (sat)
f
T
Test
conditions
Min
40
30
5
1
10
1
60
400
0.5
1.5
90
V
V
MHz
Typ
Max
Unit
V
V
V
µA
µA
µA
I
C
= 100μA, I
E
=0
I
C
= 10mA, I
B
=0
I
E
= 100μA, I
C
=0
V
CB
= 40 V, I
E
=0
V
CE
= 30 V, I
B
=0
V
EB
= 6 V, I
C
=0
V
CE
= 2 V, I
C
= 1A
I
C
= 2A, I
B
= 0.2 A
I
C
= 2A, I
B
= 0.2 A
V
CE
= 5V, I
C
=0.1A
f =10MHz
CLASSIFICATION OF h
FE
Rank
Range
R
60-120
O
100-200
Y
160-320
GR
200-400
A,Jun,2011
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
