JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
BD135/137/139
TRANSISTOR (NPN)
TO – 126
1. EMITTER
2. COLLECTOR
3. BASE
FEATURES
High Current
Complement To BD136, BD138 And BD140
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
Collector-Emitter Voltage
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Parameter
Collector-Base Voltage
BD135
BD137
BD139
BD135
BD137
BD139
Value
45
60
80
45
60
80
5
1.5
1.25
100
150
-55~+150
V
A
W
℃/W
℃
℃
V
V
Unit
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
BD135
BD137
BD139
Collector-emitter sustaining voltage
BD135
BD137
BD139
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
*Pulse test: pulse width
≤350μs,
duty cycle≤ 2.0%.
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)*
h
FE(2)*
h
FE(3)*
V
CE(sat)
V
BE
*
*
Symbol
V
(BR)CBO
Test
conditions
Min
45
60
80
Typ
Max
Unit
I
C
= 0.1mA,I
E
=0
V
V
CEO(SUS)*
I
C
=0.03A,I
B
=0
45
60
I
E
=0.1mA,I
C
=0
V
CB
=30V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=2V, I
C
=150mA
V
CE
=2V, I
C
=5mA
V
CE
=2V, I
C
=500mA
I
C
=500mA,I
B
=50mA
V
CE
=2V, I
C
=500mA
40
25
25
0.5
1
V
V
80
5
0.1
10
250
V
V
μA
μA
CLASSIFICATION OF h
FE(1)
RANK
RANGE
6
40-100
10
63-160
16
100-250
A,Oct,2010
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
