JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate DIODE
ＳＯＴ－３２３
BAS19W/20W/21W
FEATURES
SWITCHING DIODE
1.BASE
2.EMITTER
3.COLLECTOR
１．２５±０．０５
１．０１ ＲＥＦ
Power dissipation
P
D
:
200
m
W（Tamb=25℃）
Collector current
I
F
:
200
m
A
Collector-base voltage
V
R
: 19W:120 V; 20W:150V ; 21W:200V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
２．３０±０．０５
１．３０±０．０３
Unit : mm
Marking :BAS19W
BAS20W
BAS21W
KA8
KT2
KT3
ELECTRICAL CHARACTERISTICS（Tamb=25℃
unless
otherwise
specified）
Parameter
BAS19W
Symbol
Test
conditions
MIN
100
MAX
０．３０
UNIT
Reverse breakdown voltage
BAS20W
BAS21W
BAS19W
V
(BR) R
I
R
= 100µA
150
200
２．００±０．０５
V
100V
I
R
V
R
=150V
200V
V
F
C
D
t
rr
I
F
=100mA
I
F
=200mA
V
R
=0V
f=1MHz
1000
1250
5
50
mV
0.1
µA
Reverse
voltage leakage current
BAS20W
BAS21W
Forward
Diode
voltage
capacitance
pF
nS
Reveres recovery time
I
F
=I
R
=30mA
I
rr
=0.1×I
R
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
