JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
8550S
TRANSISTOR（ PNP
）
TO—92
FEATURE
Power dissipation
P
CM
: 0.625 W（Tamb=25℃）
Collector current
I
CM
: -0.5
A
Collector-base voltage
V
(BR)CBO
: -40
V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE
（
1
）
DC current gain
h
FE
（
2
）
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
1.EMITTER
2. COLLECTOR
3.BASE
1 2 3
unless
Test
otherwise
MIN
specified）
TYP
MAX
UNIT
V
V
V
-0.1
-0.1
-0.1
conditions
Ic= -100
μＡ
, I
E
=0
Ic= -0.1 mA，
I
E
= -100
μ
A，
V
CB
= -40 V ,
V
CE
= -20 V ,
V
EB
= - 3
V，
I
B
=0
I
C
=0
I
E
=0
I
B
=0
I
C
=0
-40
-25
-5
μ
A
μ
A
μ
A
V
CE
= -1 V, I
C
= -50m A
V
CE
= -1 V, I
C
= -500m A
I
C
=-500mA, I
B
=-50 mA
I
C
=-500mA, I
B
=-50 mA
V
CE
=- 6 V,
I =-20mA
C
85
50
300
-0.6
-1.2
V
V
Transition frequency
f
T
f =
30MHz
150
MHz
CLASSIFICATION OF h
FE
(1)
Rank
Range
B
85-160
C
120-200
D
160-300
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
