JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO-92
8550S TRANSISTOR (PNP)
1. EMITTER
2. COLLECTOR
3. BASE
FEATURE
Excellent hFE linearity
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
-40
Unit
V
-25
V
-5
V
Collector Current -Continuous
Collector Dissipation
-500
625
mA
mW
℃
PC
TJ
Junction Temperature
150
Tstg
Junction and Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
-40
-25
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= -100uA, IE=0
IC= -1mA, IB=0
V
IE= -100uA, IC=0
VCB= -40V, IE=0
V
-0.1
-0.1
-0.1
400
uA
uA
uA
Collector cut-off current
ICEO
VCE= -20V,IB=0
Emitter cut-off current
IEBO
VEB= - 3V, IC=0
hFE(1)
VCE= -1V, IC= -50mA
VCE= -1V, IC= -500mA
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
85
50
DC current gain
hFE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
-0.6
-1.2
V
V
V
CE=- 6V, IC=-20mA
Transition frequency
fT
150
MHz
f =30MHz
CLASSIFICATION OF hFE
(1)
B
C
D
D3
300-400
Rank
Range
85-160
120-200
160-300
A,May,2011
JCST [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]