JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
3DD13005F
FEATURES
TO-220F
1. BASE
2. COLLECTOR
3. EMITTER
TRANSISTOR (NPN)
·
power switching applications
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
700
400
9
4
2
150
-55~150
Unit
V
V
V
A
W
℃
123
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter
breakdown
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE1
DC current gain
h
FE2
h
FE3
V
CE (sat)1
Collector-emitter saturation voltage
V
CE (sat)2
Base-emitter saturation voltage
Transition Frequency
Fall time
Storage time
V
BE (sat)
f
T
t
f
t
s
I
C
=4A, I
B
=1A
I
C
=2A, I
B
=0.5A
V
CE
=10V, I
C
=500mA, f =1MHz
I
B1
=-I
B2
=0.4A, I
C
=2A, V
CC
=120V
I
C
=0.25A
2.5
5
0.6
5.0
0.8
1.6
V
V
MHz
µs
µs
Test conditions
I
C
= 1mA, I
E
=0
I
C
= 10mA, I
B
=0
I
E
= 1mA, I
C
=0
V
CB
= 700V, I
E
=0
V
CE
= 400V, I
B
=0
V
EB
=7V, I
C
=0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 10mA
V
CE
= 5V, I
C
= 2A
I
C
=1A, I
B
=0.2A
10
5
8
40
0.3
V
Min
700
400
9
1
0.1
0.05
60
Typ
Max
Unit
V
V
V
mA
mA
mA
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
CLASSIFICATION OF h
FE1
Rank
Range
10-15
15-20
20-25
25-30
30-35
35-40
40-45
45-50
50-55
55-60
CLASSIFICATION OF
t
S
Rank
Range
A
2.5-3(μs )
B1
3-3.5(μs )
B2
3.5-4 (μs )
C1
4-4.5 (μs )
C2
4.5-5 (μs )
A,Jun,2011
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
