JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-3P Plastic-Encapsulate Transistors
TO – 3P
3CA1943
TRANSISTOR (PNP)
1. BASE
FEATURES
High Breakdown Voltage
General Purpose Switching and Amplification
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-120
-120
-5
-15
3
42
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
*Pulse test
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
*
h
FE(2)
Test
conditions
Min
-120
-120
-5
Typ
Max
Unit
V
V
V
I
C
=-100µA,I
E
=0
I
C
=-50mA,I
B
=0
I
E
=-100µA,I
C
=0
V
CB
=-120V,I
E
=0
V
EB
=-5V,I
C
=0
V
CE
=-5V, I
C
=-1A
V
CE
=-5V, I
C
=-7A
I
C
=-8A,I
B
=-800mA
V
CE
=-5V,I
C
=-1A
-5
-5
55
35
-3
10
160
μA
μA
V
CE(sat)
f
T
V
MHz
CLASSIFICATION OF h
FE (1)
RANK
RANGE
R
55-110
O
80-160
A,Dec,2010
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
