JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126C Plastic-Encapsulate Transistors
2SD794/794A
FEATURES
High
Voltage
and Large
Current Capacity
Complementary to 2SB744,2SB744A
MAXIMUM RATINGS
(T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage 2SD794
2SD794A
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
70
45
60
5
3
1
150
-55 to +150
Unit
V
V
V
A
W
℃
℃
TRANSISTOR (NPN)
TO- 126C
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE(sat)
unless
Test
otherwise
specified
Min
)
Typ
Max
Unit
V
V
V
conditions
I
C
=
100
µA,I
E
=0
I
C
=
1
mA,I
B
=0
2SD794
2SD794A
I
E
=
100
µA,I
C
=0
V
CB
=
45
V,I
E
=0
V
EB
=
3
V,I
C
=0
V
CE
=
5
V,I
C
=
20
mA
V
CE
=
5
V,I
C
=
0.5
A
I
C
=
1.5
A,I
B
=
0.15
A
I
C
=
1.5
A,I
B
=
0.15
A
V
CE
=
5
V,I
C
=
100
mA
V
CB
=
10
V,I
E
=0,f=
1
MHz
70
45
60
5
1
1
30
60
320
2
2
60
40
µA
µA
V
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF
Rank
Range
Marking
h
FE(2)
R
60-120
Q
100-200
P
160-320
A,Jun,2011
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
