JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
2SD669
2SD669A
TRANSISTOR (NPN)
TO-126
FEATURES
Low
Frequency Power Amplifier Complementary Pair
with 2SB649/A
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
1. EMITTER
2. COLLECTOR
3. BASE
Symbol
V
CBO
V
CEO
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
2SD669
2SD669A
Value
180
120
160
5
1.5
1
150
-55-150
Unit
V
V
V
A
W
℃
℃
V
EBO
I
C
P
C
T
J
T
stg
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE
f
T
C
ob
V
CE
=5V, I
C
=500mA
I
C
=500mA, I
B
=50mA
V
CE
=5V, I
C
=150mA
V
CE
=5V, I
C
=150mA
V
CB
=10V, I
E
=0, f=1MHz
140
14
Test
I
C
=1mA, I
E
=0
I
C
=10mA, I
B
=0
2DS669
2SD669A
I
E
=1mA, I
C
=0
V
CB
=160V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=5V, I
C
=150mA
2SD669
2SD669A
60
60
30
1
1.5
V
V
MHz
pF
conditions
Min
180
120
160
5
10
10
320
200
Typ
Max
Unit
V
V
V
µA
µA
CLASSIFICATION OF
Rank
Range
2SD669
2SD669A
h
FE(1)
B
60-120
60-120
C
100-200
100-200
A,Jun,2011
D
160-320
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
