JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126C Plastic-Encapsulate Transistors
2SD668/2SD668A
TRANSISTOR (NPN)
TO – 126C
1. EMITTER
2. COLLECTOR
3. BASE
FEATURES
Low Frequency Power Amplifier Complementary Pair with
2SB649/A
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Value
180
2SD668
2SD668A
120
160
5
0.05
1
125
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
V
CE(sat)
V
BE
C
ob
f
T
Test
conditions
2SD668
2SD668A
Min
180
120
160
5
10
1
2SD668
2SD668A
60
60
30
2
1.5
3.5
140
V
V
pF
MHz
320
200
Typ
Max
Unit
V
V
V
μA
μA
I
C
=10µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=10µA,I
C
=0
V
CB
=160V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=1mA
I
C
=30mA,I
B
=3mA
V
CE
=5V, I
C
=10mA
V
CB
=10V,I
E
=0, f=1MHz
V
CE
=10V,I
C
=10mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CLASSIFICATION OF h
FE(1)
TYPE
2SD668
RANK
RANGE
B
60-120
C
100-200
D
160-320
2SD668A
A,Dec,2010
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
