JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SD2152
TRANSISTOR (NPN)
1. EMITTER
FEATURES
High DC Current Gain
Low Saturation Medium Current Application
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
22
22
6
3
700
178
150
-55~+150
2. COLLECTOR
3. BASE
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Transition frequency
V
CE(sat)
f
T
Test
conditions
Min
22
22
6
0.1
0.1
130
180
180
0.4
150
V
MHz
950
Typ
Max
Unit
V
V
V
μA
μA
I
C
= 0.05mA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=0.01mA,I
C
=0
V
CB
=20V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=2V, I
C
=0.15mA
V
CE
=2V, I
C
=100mA
V
CE
=2V, I
C
=500mA
I
C
=2000mA,I
B
=100mA
V
CE
=6V,I
C
=50mA, f=30MHz
CLASSIFICATION OF h
FE
RANK
RANGE
Q
180-290
R
270-380
S
340-560
T
560-950
A,Dec,2010
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
