JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
2SD2136
TRANSISTOR (NPN)
TO – 126
1. EMITTER
2. COLLECTOR
3. BASE
FEATURES
High Forward Current Transfer Ratio h
FE
Which has
Satisfactory Linearity.
Low Collector-Emitter Saturation Voltage V
CE(sat)
Allowing Supply with the Radial Taping
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
60
6
3
1.25
100
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
*Pulse test: pulse width
≤300μs,
duty cycle≤ 2.0%.
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
CEO
I
EBO
h
FE(1) *
h
FE(2)
V
BE
f
T
*
*
*
V
CE(sat)
*
Test
conditions
Min
60
60
6
Typ
Max
Unit
V
V
V
I
C
=100µA,I
E
=0
I
C
=30mA,I
B
=0
I
E
= 100µA,I
C
=0
V
CB
=60V,I
E
=0
V
CE
=60V,I
B
=0
V
EB
=6V,I
C
=0
V
CE
=4V, I
C
=1A
V
CE
=4V, I
C
=3A
I
C
=3A,I
B
=0.375A
V
CE
=4V, I
C
=3A
V
CE
=5V,I
C
=0.1A, f=10MHz
V
(BR)EBO
200
300
1
40
10
1.2
1.8
30
250
μA
μA
mA
V
V
MHz
CLASSIFICATION OF h
FE(1)
RANK
RANGE
P
40-90
Q
70-150
R
120-250
A,Dec,2010
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
