JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
2SD2136 TRANSISTOR (NPN)
TO – 126
FEATURES
1. EMITTER
2. COLLECTOR
3. BASE
z
High Forward Current Transfer Ratio hFE Which has
Satisfactory Linearity.
z
z
Low Collector-Emitter Saturation Voltage VCE(sat)
Allowing Supply with the Radial Taping
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
Unit
V
60
60
Collector-Emitter Voltage
Emitter-Base Voltage
V
6
V
Collector Current
3
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
1.25
100
150
-55~+150
W
RθJA
Tj
℃/W
℃
℃
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
60
60
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
IC=100µA,IE=0
IC=30mA,IB=0
*
V(BR)CEO
V
V(BR)EBO
ICBO
IE= 100µA,IC=0
VCB=60V,IE=0
V
200
300
1
μA
μA
mA
Collector cut-off current
ICEO
VCE=60V,IB=0
Emitter cut-off current
IEBO
VEB=6V,IC=0
*
hFE(1)
VCE=4V, IC=1A
VCE=4V, IC=3A
IC=3A,IB=0.375A
VCE=4V, IC=3A
VCE=5V,IC=0.1A, f=10MHz
40
10
250
DC current gain
*
hFE(2)
*
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
1.2
1.8
V
V
*
VBE
Transition frequency
fT
30
MHz
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE(1)
RANK
P
Q
R
RANGE
40-90
70-150
120-250
A,Dec,2010
JCST [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]