JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251 Plastic-Encapsulate Transistors
2SD1899-Z TRANSISTOR (NPN)
TO-251
FEATURES
z
High hFE hFE=100 to 400
Low VCE(sat) VCE(sat)=0.25V
z
1.BASE
1
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
2.COLLECTOR
3.EMITTER
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
Units
V
60
60
V
7
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
3
1
A
PC
W
℃
℃
TJ
150
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
60
60
7
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=100μA,IE=0
V(BR)CEO IC =1mA,IB=0
V(BR)EBO IE=100μA,IC=0
V
V
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
VCB=60V,IE=0
10
10
μA
μA
Emitter cut-off current
VEB=7V,IC=0
VCE=2V,IC=200mA
VCE=2V,IC=600mA
VCE=2V,IC=2A
60
100
50
DC current gain
400
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
IC=1.5A,IB=150mA
IC=1.5A,IB=150mA
VCE=5V,IC=1.5A
VCB=10V,IE=0,f=1MHz
0.25
1.2
V
V
120
30
MHz
pF
Collector output capacitance
Turn on Time
Cob
ton
0.5
2.0
0.5
Switching Time
tstg
VCC=10V,IC=1A,IB1=-IB2=-0.1A
μs
Storage Time
Fall Time
tf
CLASSIFICATION OF hFE(2)
Rank
M
L
K
100-200
160-320
200-400
Range
JCST [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
