JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251 Plastic-Encapsulate Transistors
2SD1802
TRANSISTOR (NPN)
TO-251
FEATURES
Adoption of FBET,MBIT
Processes
Large
Current Capacity
and
Wide
ASO
Low
Collector-to-Emitter Saturation Voltage
Fast
Switching Speed
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
6
3
1
150
-55-150
Unit
V
V
V
A
W
℃
℃
1.BASE
2.COLLECTOR
3.EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE(sat)
f
T
C
ob
V
CE
=2V, I
C
=3A
I
C
=2A, I
B
=100mA
I
C
=2A, I
B
=100mA
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
150
25
35
0.5
1.2
V
V
MHz
pF
Test
I
C
=10µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=2V, I
C
=100mA
100
conditions
Min
60
50
6
1
1
560
Typ
Max
Unit
V
V
V
µA
µA
CLASSIFICATION OF
Rank
Range
h
FE(1)
R
100-200
S
140-280
T
200-400
U
280-560
A,Jun,2011
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
