JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251/TO-252-2Plastic-Encapsulate Transistors
2SD1760
TO-251
TO-252-2
TRANSISTOR (NPN)
FEATURES
Low V
CE(sat)
. V
CE(sat)
= 0.5V (Typ.) (I
C
/I
B
= 2A / 0.2A)
Complements the 2SB1184.
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
5
3
1.5
150
-55 to +150
Units
V
V
V
A
W
℃
℃
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
unless
Test
otherwise
conditions
specified)
MIN
60
50
5
1
1
82
390
1
90
40
V
MHz
pF
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=50μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50μA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=3V, I
C
=500mA
I
C
=2A, I
B
=200mA
V
CE
=5V, I
C
=500mA,f=30MHz
V
CB
=10V, I
E
=0, f=1MHz
CLASSIFICATION OF
Rank
Range
Marking
h
FE
P
82-180
Q
120-270
R
180-390
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
