JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
2SD1757K TRANSISTOR (NPN)
FEATURES
z
Optimal for muting.
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
30
Unit
V
15
V
6.5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
500
mA
mW
℃
PC
200
TJ
150
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC=50μA,IE=0
Min
30
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
15
V
IC=1mA,IB=0
6.5
V
IE=50μA,IC=0
0.5
0.5
560
0.4
μA
μA
VCB=20V,IE=0
Emitter cut-off current
IEBO
VEB=4V,IC=0
DC current gain
hFE
120
VCE=3V,IC=100mA
IC= 500mA, IB=50mA
VCE=5V, IC= 50mA ,f=100MHz
VCB=10V,IE=0,f=1MHZ
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
V
150
15
MHz
pF
Collector Output Capacitance
Cob
CLASSIFICATION OF hFE
Rank
Q
R
S
120-270
AAQ
180-390
AAR
270-560
AAS
Range
MARKING
A,May,2011
JCST [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]