JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
2SC3930
SOT-323
TRANSISTOR (NPN)
FEATURES
For high-frequency Amplification Complementary to 2SA1532
Optimum for RF amplification of FM/AM radios
High transition frequency f
T
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
30
20
5
30
150
150
-55-150
Units
V
V
V
mA
mW
℃
℃
1.BASE
2.EMITTER
3.COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Common emitter reverse transfer
capacitance
Noise figure
Reverse transfer impedance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
f
T
Cre
NF
Z
rb
Test
conditions
I
E
=0
MIN
30
20
5
0.1
0.1
70
150
1.5
4
50
220
MHz
pF
dB
Ω
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=100μA,
I
C
= 100μA, I
B
=0
I
E
= 100μA, I
C
=0
V
CB
=10V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=10V,I
C
=1mA
V
CE
=10V,I
E
=1mA,
f=200MHZ
V
CB
=10V,I
C
=1mA,
f=10.7MHZ
V
CB
=10V,I
C
=1mA, f=5MHz
V
CB
=10V,I
C
=1mA, f=2MHz
CLASSIFICATION OF h
FE(1)
Marking
Range
VB
70-140
VC
110-220
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
