JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
TO – 92M
TO – 92MOD
2SC3243 TRANSISTOR (NPN)
1. COLLECTOR
1. EMITTER
2. BASE
FEATURES
2. COLLECTOR
3. EMITTER
3. BASE
z
z
High Voltage
High Collector Current
Low VCE(sat)
z
z
High Collector Dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
Unit
V
60
60
Collector-Emitter Voltage
Emitter-Base Voltage
V
6
V
Collector Current
1
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
900
139
150
-55~+150
mW
℃/W
℃
RθJA
Tj
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
60
60
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= 10µA,IE=0
IC=2mA,IB=0
V
IE=10µA,IC=0
V
VCB=50V,IE=0
0.2
0.2
300
0.3
25
μA
μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
DC current gain
hFE
VCE=4V, IC=100mA
IC=0.5A,IB=25mA
VCB=10V,IE=0, f=1MHz
VCE=2V,IC=10mA
55
80
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
VCE(sat)
Cob
V
pF
fT
MHz
CLASSIFICATION OF hFE
C
D
E
RANK
55-110
90-180
150-300
RANGE
A,Dec,2010
JCST [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]