JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
2SC3149M
TRANSISTOR (NPN)
TO – 126
1. BASE
2. COLLECTOR
3. EMITTER
FEATURES
High Breakdown Voltage:
Fast Switching Speed.
Wide ASO (Safe Operating Area)
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
2SC3149M
2SC3149M
88
88-C
Value
1290
1200
800
7
0.6
1.25
100
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltag
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
EBO
h
FE(1)*
h
FE(2)*
h
FE(3)*
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
*Pulse test: pulse width
≤300μs,
duty cycle≤ 2.0%.
*
V
CE(sat)
*
Test
I
E
=0
conditions
2SC3149M
88
2SC3149M 88-C
Min
1290
1200
800
7
Typ
Max
Unit
V
V
V
I
C
=0.1mA,
I
C
=1mA,I
B
=0
I
E
=1m A,I
C
=0
*
V
(BR)EBO
V
CB
=1000V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=5V, I
C
=0.1A
V
CE
=5V, I
C
=0.2A
V
CE
=5V, I
C
=0.5mA
I
C
=200mA,I
B
=40mA
I
C
=200mA,I
B
=40mA
V
CB
=10V,I
E
=0, f=1MHz
V
CE
=10V,I
C
=0.1A,
30
15
*
10
10
24
8
8
1
1.5
35
μA
μA
V
V
pF
MHz
V
BE(sat)
C
ob
f
T
A,Dec,2010
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
