JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
2SC2655
TRANSISTOR (NPN)
TO-92L
FEATURES
Low
Saturation Voltage:
V
CE(sat)
=0.5V(Max)(I
C
=1A)
High
Speed Switching Time:
t
stg
=1μs(Typ.)
Complementary to 2SA1020
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
50
50
5
2
0.9
150
-55-150
Unit
V
V
V
A
W
℃
℃
1.EMITTER
2.COLLECTOR
3.BASE
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Tune on Time
Switch time
Storage Time
Fall Time
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
Test
conditions
Min
50
50
5
1
1
70
40
0.5
1.2
100
30
0.15
2
0.15
μs
V
V
MHz
pF
240
Typ
Max
Unit
V
V
V
μA
μA
I
C
=100μA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=100μA,I
C
=0
V
CB
=50V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=2V,I
C
=500mA
V
CE
=2V,I
C
=1.5A
I
C
=1A,I
B
=0.05A
I
C
=1A,I
B
=0.05A
V
CE
=2V,I
C
=0.5A
V
CB
=10V,I
E
=0,f=1MHz
V
CC
=30V,Ic=1A,
I
B1
=-I
B2
=0.05A
CLASSIFICATION OF h
FE(1)
Rank
Range
O
70-140
Y
120-240
A,Jun,2011
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
