JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TO-92L
TRANSISTOR (NPN)
1.
EMITTER
2.
COLLECTOR
3.
BASE
2SC2383
FEATURE
High Voltage: V
CEO
=160V
Large Continuous Collector Current Capability
Complementary to 2SA1013
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted
)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
160
160
6
1
0.75
150
-55 to +150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CER
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE
f
T
Test
conditions
Min
160
160
6
1
10
1
60
40
1
0.75
20
V
V
MHz
320
Max
Unit
V
V
V
μA
μA
μA
I
C
= 100μA , I
E
=0
I
C
= 10mA, I
B
=0
I
E
= 10μA, I
C
=0
V
CB
=150V, I
E
=0
V
CB
=150V,R
EB
= 10MΩ
V
EB
=6V, I
C
=0
V
CE
=5V, I
C
=200mA
V
CE
=5V, I
C
=10mA
I
C
=500m A, I
B
=50mA
I
C
=5mA, V
CE
= 5V
V
CE
=5V, I
C
=200mA
CLASSIFICATION OF h
FE1
Rank
Range
R
60-120
O
100-200
Y
160-320
A,Jun,2011
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
