JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
TO-92MOD
2SC2236 TRANSISTOR (NPN)
1. EMITTER
FEATURE
Complementary to 2SA966 and 3 Watts output Applications.
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
30
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
30
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
1.5
A
PC
0.9
W
TJ
150
-55-150
℃
℃
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
30
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)
CBO
IC= 1mA , IE=0
IC= 10mA , IB=0
IE= 1mA, IC=0
V(BR)
CEO
30
V
V(BR)
EBO
5
V
ICBO
IEBO
VCB=30V , IE=0
0.1
0.1
320
2
µA
µA
Emitter cut-off current
VEB=5V ,
IC=0
DC current gain
hFE
VCE=2 V, IC= 500mA
IC= 1.5 A, IB= 0.03A
IC= 500 mA, VCE= 2V
100
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
V
V
1
120
Transition frequency
V
CE= 2V, IC= 500mA
MHz
pF
f T
Collector output Capacitance
VCB= 10V, IE= 0,f=1MHz
30
Cob
CLASSIFICATION OF hFE
Rank
O
Y
Range
100-200
160-320
A,Jun,2011
JCST [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]