JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SC1959
TRANSISTOR (NPN)
TO-92
FEATURES
Excellent h
FE
L
inearlity
1.EMITTER
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
35
30
5
0.5
500
150
-55-150
Unit
V
V
V
A
mW
℃
℃
2. COLLECTOR
3. BSAE
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE
f
T
C
ob
V
CE
=6 V, I
C
= 400mA
I
C
= 100mA, I
B
= 10mA
V
CE
= 1V, I
C
= 100mA
V
CE
= 12V, I
C
=2mA
V
CB
=6V,I
E
=0,f=1MHz
300
7
25
0.25
1.0
V
V
MHz
pF
Test
conditions
Min
35
30
5
0.1
0.1
70
400
Typ
Max
Unit
V
V
V
µA
µA
I
C
= 100µA, I
E
=0
I
C
= 1mA , I
B
=0
I
E
= 100µA, I
C
=0
V
CB
= 35V, I
E
=0
V
EB
= 5 V, I
C
=0
V
CE
=1 V, I
C
= 100mA
CLASSIFICATION OF h
FE
Rank
h
FE(1)
Range
h
FE(2)
25(min)
40(min)
O
70-140
Y
120-240
GR
200-400
A,May,2011
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
