JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SC1675
TRANSISTOR (NPN)
1.EMITTER
FEATURES
Low Collector Current
General Purpose Switching and Amplification
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
50
30
5
50
625
200
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
2.BASE
3.COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
C
ob
f
T
Test
conditions
Min
50
30
5
100
100
40
240
0.3
0.75
2.5
150
V
V
pF
MHz
Typ
Max
Unit
V
V
V
nA
nA
I
C
= 10µA,I
E
=0
I
C
=5mA,I
B
=0
I
E
=10µA,I
C
=0
V
CB
=50V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=6V, I
C
=1mA
I
C
=10mA,I
B
=1mA
V
CE
=6V, I
C
=1mA
V
CB
=6V,I
E
=0, f=1MHz
V
CE
=6V,I
C
=1mA
CLASSIFICATION OF h
FE
RANK
RANGE
R
40-80
O
70-140
Y
120-240
A,Dec,2010
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
