JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252 Plastic-Encapsulate Transistors
2SB1184
TRANSISTOR (PNP)
TO-252
FEATURES
Low V
CE(sat)
. V
CE(sat)
= -0.5V (Typ.) (I
C
/I
B
= -2A / -0.2A)
Complements the 2SD1760 / 2SD1864.
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-60
-50
-5
-3
1
150
-55-150
Unit
V
V
V
A
W
℃
℃
1.
BASE
2.
COLLECTOR
3.
EMITTER
ELECTRICAL CHARACTERISTICS (T
a
=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
V
BE(sat)
unless otherwise specified)
Test
I
C
=
-50
µA,
I
E
=0
I
C
=
-1
mA, I
B
=0
I
E
=
-50
µA,
I
C
=0
V
CB
=
-40
V, I
E
=0
V
EB
=
-4
V, I
C
=0
V
CE
=
-3
V, I
C
=
-0.5
A
I
C
=
-2
A, I
B
=
-0.2
A
I
C
=
-1.5
A, I
B
=
-0.15
A
V
CE
=
-5
V, I
C
=
-0.5
A, f=
30
MHz
V
CB
=
-10
V, I
E
=0, f=
1
MHz
conditions
Min
Typ
Max
Unit
V
V
V
-60
-50
-5
-1
-1
82
390
-1
-1.2
70
50
µA
µA
V
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF
Rank
Range
Marking
h
FE(1)
P
82-180
Q
120-270
R
180-390
A,Jun,2011
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
