JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251/TO-252-2Plastic-Encapsulate Transistors
2SB1182
FEATURES
Power dissipation
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-40
-32
-5
-2
1.5
150
-55-150
Units
V
V
V
A
W
℃
℃
TRANSISTOR (PNP)
TO-251
TO-252-2
1.BASE
1
2.COLLECTOR
3EMITTER
1
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
f
T
C
ob
Test
otherwise specified)
MIN
-40
-32
-5
-1
-1
82
390
-0.8
100
50
V
MHz
pF
TYP
MAX
UNIT
V
V
V
µA
µA
conditions
I
C
=-50µA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-50µA,I
C
=0
V
CB
=-20V,I
E
=0
V
EB
=-4V,I
C
=0
V
CE
=-3V,I
C
=-500mA
I
C
=-2A,I
B
=-200mA
V
CE
=-5V,I
C
=-0.5A,f=30MHz
V
CB
=-10V,I
E
=0,f=1MHz
CLASSIFICATION OF
Rank
Range
h
FE(1)
P
82-180
Q
120-270
R
180-390
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
