10 GB/S INTEGRATED AMPLITUDE MODULATOR
WITH ATTENUATOR
3
Specifications
Parameter
General
Material
Crystal orientation
Waveguide process
Optical
Operating wavelength
Insertion loss (with connector) (note
1
)
On/off extinction ratio, low frequency
Optical return loss
Electrical
RF port
Vπ at 10 Gb/s PRBS
S21 electro-optic bandwidth (-3 dBe) (note
2, 3
)
S11 return loss
0.13 to 2.5 GHz (note
3
)
3 to 9 GHz (note
3
)
9 to 15 GHz (note
3
)
RF input power
Chirp, alpha parameter
Bias port
Vπ at DC
Impedance
Attenuator port
Vπ attenuator
Attenuation range
Mechanical
Input fiber
Output fiber
Input connector
Output connector
RF connection
Bias connection
Environmental
Operating temperature
Storage temperature
Specification
Lithium niobate
X-cut, y-propagating
Titanium-indiffused
1530 to 1605 nm
≤7
dB
≥20
dB
≤-45
dB
≤6.8
V
≥10
GHz
≤-14
dB
≤-10
dB
≤-6
dB
27 dBm
±0.2
≤5.8
V
≥10,000 Ω
≤8.4
V
≥15
dB
Fujikura SM-15-P-8/125-UV/UV-400
SMF-28 or Fujikura SM-15-P-8/125-UV/UV-400
FC/SPC
FC/SPC
K connector
DC feedthroughs
0 to 70 °C
-40 to 80 °C
1. Insertion loss is measured at the maximum of the modulator’s transfer function and does not include the 3 dB loss incurred when operating at quadrature
2. Relative to 30 MHz
3. Variances with temperature and wavelength included