APE MICROWAVE ANALOG INTENSITY MODULATOR
4
Specifications
Parameter
Optical (note
1
)
Operating wavelength
Insertion loss (note
2
)
On/off extinction ratio
Optical return loss
Electrical (note
1
)
RF port
RF input power
V
π
at 1 GHz (note
3
)
Impedance
Bias port
V
π
at DC
Impedance
Deviation from quadrature (note
4
)
General
Material
Crystal orientation
Mechanical
Input optical power
Electrical connectors (package)
Fibers
1320 nm device, PM input
1320 nm device, SM output
1550 nm device, PM input
1550 nm device, SM output
Environmental
Operating temperature
Storage temperature
AM-130
AM-150
Minimum
Maximum
Minimum
Maximum
1320±10 nm
5.0 dB
20 dB
-45 dB
1550±10 nm
Maximum
Maximum
Typical
Maximum
27 dBm
5.5 V
50
Ω
10.5 V
>100 kΩ
±1 V
Lithium niobate
X-cut, y-propagating
12 V
6.0 V
Maximum
200 mW
SMA connectors
Fujikura SM 13-P-7/125-UV/UV-100
SMF-28
Fujikura SM 15-P-8/125-UV/UV-100
SMF-28
0 to 70 °C
-40 to 85 °C
Note: Specifications are subject to change without notice. All device specifications are at room temperature and at beginning of life. These devices are offered as limited
production models. Telcordia qualification of this device is not planned at this time.
1. All measurements made at 23 °C unless otherwise noted.
2. Optical loss is measured at the maximum of the modulator’s transfer function and does not include the 3 dB loss incurred when operated at quadrature.
3. V
π
is specified at the modulator. P
π
is the power required to generate V
π
/2 at the connector.
4. Optimum distortion performance may require bias control.
JDSU [ JDS UNIPHASE CORPORATION ]
