2.5 GB/S BIAS-FREE MODULATOR WITH INTEGRAL ATTENUATOR
3
Specifications
Parameter
General
Material
Crystal orientation
Waveguide process
Optical
Operating wavelength
Insertion loss, no connectors (note
2
)
On/off extinction ratio, low frequency
Optical return loss
Electrical
RF port
Drive voltage, V peak-to-peak, at 2.5 Gb/s PRBS (note
3
)
V
π
at 100 kHz (note
3
)
S21 electro-optic bandwidth (-3 dBe) (note
1, 3
)
S11 return loss
0.03 to 2.5 GHz (note
3
)
RF input power
Chirp, alpha parameter
Attenuator port
V
π
at DC
Impedance
Mechanical
Input
Output (note
4
)
RF connection
Bias connection
Environmental
Operating temperature
Storage temperature
1. Relative to 30 MHz.
Specification
Lithium niobate
x-cut, y-propagating
APE/titanium-indiffused
1535 to 1565 nm
≤6.5
dB
≥20
dB
≥50
dB
3.6 V typical
≤3.7
V
≥2.5
GHz
≤-9.5
dB
≤24
dBm
|α|<0.2
≤5.0
V
≥1
MΩ
Fujikura SM-15-P-8/125-UV/UV-400
SMF-28
Pins
Pins
0 to 65 °C
-40 to 85 °C
2. Insertion loss is measured at the maximum of the modulator’s transfer function and does not include the 3 dB loss incurred when operating at quadrature.
3. Variances with temperature and wavelength included.
4. PM output fiber also available.