TRANSISTORS
●FEATURES：①HIGH VOLTAGE CAPABILITY ②HIGH SPEED SWITCHING
●APPLICATION：①FLUORESCENT LAMP ②ELECTRONIC BALLAST
EB102H
③WIDE SOA
●Absolute
Maximum Ratings (Tc=25℃)
PARAMETER
Collector–Base Voltage
Collector–Emitter Voltage
Emitter –Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
Tstg
VALUE
600
400
9
0.8
10
150
-65-150
UNIT
V
V
V
A
W
℃
℃
TO-92
NPN
●
Electronic Characteristics (Tc=25℃)
CHARACTERISTICS
SYMBOL
Collector–Base Cutoff Current
I
CBO
Collector–Emitter Cutoff Current
Collector–Emitter Voltage
Emitter –Base Voltage
Collector–Emitter Saturation
Voltage
Base–Emitter Saturation Voltage
DC Current Gain
Storage Time
Falling Time
I
CEO
V
CEO
V
EBO
Vcesat
Vbesat
HFE
Ts
T
f
TEST CONDITION
V
CB
=600v
V
CE
=400v
I
C
=10mA I
B
=0
I
E
=1mA I
C
=0
I
C
=0.1A I
B
=10mA
I
C
=0.5A I
B
=0.1A
I
C
=0.1A I
B
=10mA
V
CE
=5v I
C
=1mA
V
CE
=10v I
C
=0.1A
V
CE
=5v I
C
=0.8A
V
CC
=5V
I
C
=0.1A
MIN
MAX
100
250
UNIT
µA
µA
V
V
V
V
V
400
9
0.4
0.8
1.0
7
10
5
2.5
4.5
0.9
40
µS
µS
●CLASSIFICATION
OF HFE AND TS
HFE
TS
10-15
2.5-3.0
15-20
3.0-3.5
20-25
3.5-4.0
25-30
4.0-4.5
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