VVZ 24
10
1: I
GT, TVJ = 125°C
2: IGT, TVJ 25°C
=
V
3: IGT, TVJ = -40°C
VG
3
2
1
6
1
5
4
4: P
GAV = 0.5 W
5: PGM 1 W
=
I
GD, TVJ = 125°C
6: PGM = 10 W
0.1
1
10
100
1000
IG
mA
Fig. 1 Surge overload current perchip
IFSM: Crest value, t: duration
Fig. 2 I2t versus time (1-10 ms)
per chip
Fig. 3 Gate trigger characteristics
Triggering:
Fig. 4 Power dissipation versus direct output current and ambient temperature
3
ZthJK
K/W
ZthJK
2
1
0
Constants for ZthJK calculation
i
Rthi (K/W)
ti (s)
1
2
3
0.17
1.4
1.1
0.028
0.44
2.6
10-3
10-2
10-1
100
101
102
s
t
Fig. 5 Transientthermalimpedancejunctiontoheatsink
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