VUO 34
90
A
250
A
1000
A2s
50 Hz
0.8 x VRRM
IFSM
IF 80
I2 t
d
200
150
100
50
70
60
50
40
30
20
10
0
TVJ = 25°C
TVJ = 130°C
TVJ = 45°C
TVJ = 45°C
max.
typ.
100
TVJ = 130°C
TVJ = 130°C
0
10
0.0
0.5
1.0
1.5
2.0
V
2.5
10-3
10-2
10-1
100
1
10
s
ms
t
t
VF
Fig. 1 Forward current versus voltage
drop per diode
Fig. 2 Surge overload current per diode
IFSM: Crest value. t:duration
Fig. 3 I2t versus time (1-10 ms)
per diode
150
Ptot
50
RthKA K/W
IdAVM
A
W
0.5
1
1.5
2
3
4
120
90
60
30
0
40
30
20
10
0
6
0
10
20
30
40
0
25
50
75
100
125
150
0
25
50
75
100 125°C 150
TK
°C
TA
A
IdAVM
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 5 Maximum forward current at
heatsink temperature TK
3.0
K/W
ZthJK
2.5
ZthJK
2.0
1.5
1.0
0.5
0.0
Constants for ZthJK calculation:
i
Rth (K/W)
ti (s)
1
2
3
4
0.005
0.3
1.245
0.95
0.008
0.05
0.1
0.5
10-3
10-2
10-1
100
101
102
s
t
Fig. 6 Transient thermal impedance junction to heatsink per diode
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