MCC 312
MCD 312
10000
106
A2s
600
A
ITSM
I2t
VR = 0V
A
DC
50 Hz
80 % VRRM
TVJ = 45°C
I
TAVM500
180° sin
120°
60°
I
8000
FAVM
TVJ = 140°C
TVJ = 45°C
30°
400
300
200
100
0
6000
4000
2000
0
TVJ = 140°C
105
104
0.001
0.01
0.1
s
1
1
10
0
25
50
75
100
TC
125 °C150
ms
t
t
Fig. 3 Surge overload current
Fig. 4 I2t versus time (1-10 ms)
Fig. 4a Maximum forward current
at case temperature
I
TSM, IFSM: Crest value, t: duration
600
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Ptot
RthKA K/W
W
0.06
0.1
0.2
0.3
0.4
0.6
0.8
500
400
300
200
100
0
DC
180° sin
120°
60°
30°
A
0
25
50
75
100
1°2C5
TA
150
0
100
200
300
400
500
ITAVM / IFAVM
3000
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Ptot
W
RthKA K/W
0.02
0.04
0.07
0.1
2500
2000
1500
1000
500
0
0.15
0.2
0.3
Circuit
B6
3xMCC312 or
3xMCD312
°C
125
0
200
400
600
800
A
0
25
50
75
100
150
TA
IdAVM
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