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IS61LV25616AL-12TI-TR 参数 Datasheet PDF下载

IS61LV25616AL-12TI-TR图片预览
型号: IS61LV25616AL-12TI-TR
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 256KX16, 12ns, CMOS, PDSO44,]
分类和应用: 静态存储器光电二极管内存集成电路
文件页数/大小: 16 页 / 341 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
 浏览型号IS61LV25616AL-12TI-TR的Datasheet PDF文件第6页浏览型号IS61LV25616AL-12TI-TR的Datasheet PDF文件第7页浏览型号IS61LV25616AL-12TI-TR的Datasheet PDF文件第8页浏览型号IS61LV25616AL-12TI-TR的Datasheet PDF文件第9页浏览型号IS61LV25616AL-12TI-TR的Datasheet PDF文件第11页浏览型号IS61LV25616AL-12TI-TR的Datasheet PDF文件第12页浏览型号IS61LV25616AL-12TI-TR的Datasheet PDF文件第13页浏览型号IS61LV25616AL-12TI-TR的Datasheet PDF文件第14页  
IS61LV25616AL  
AC WAVEFORMS  
WRITE CYCLE NO. 3(WE Controlled.ꢀ OE isꢀLOWꢀDuringꢀWriteꢀCycle)ꢀ(1)  
t
WC  
ADDRESS  
OE  
VALID ADDRESS  
t
HA  
LOW  
LOW  
CE  
t
t
AW  
t
PWE2  
WE  
t
SA  
t
PBW  
UB, LB  
HZWE  
t
LZWE  
HIGH-Z  
DATA UNDEFINED  
DOUT  
t
SD  
t
HD  
DATAIN VALID  
DIN  
UB_CEWR3.eps  
WRITE CYCLE NO. 4(LB, UB Controlled,ꢀBack-to-BackꢀWrite)ꢀ(1,3)  
t
WC  
t
WC  
ADDRESS 1  
ADDRESS 2  
ADDRESS  
OE  
CE  
t
SA  
LOW  
t
HA  
SA  
t
HA  
t
WE  
t
PBW  
t
PBW  
UB, LB  
WORD 1  
WORD 2  
t
HZWE  
t
LZWE  
HIGH-Z  
DOUT  
DATA UNDEFINED  
t
HD  
t
HD  
t
SD  
t
SD  
DATAIN  
VALID  
DATAIN  
VALID  
DIN  
UB_CEWR4.eps  
Notes:ꢀ  
1.ꢀ TheꢀꢀinternalꢀWriteꢀtimeꢀisꢀdefinedꢀbyꢀtheꢀoverlapꢀofꢀCEꢀ=ꢀLow, UBꢀand/orꢀLBꢀ=ꢀLow,ꢀandꢀWEꢀ=ꢀLOW.ꢀAllꢀsignalsꢀmustꢀbeꢀinꢀ  
validꢀstatesꢀtoꢀinitiateꢀaꢀWrite,ꢀbutꢀanyꢀcanꢀbeꢀdeassertedꢀtoꢀterminateꢀtheꢀWrite.ꢀTheꢀtsa,ꢀtHa, tsD,ꢀandꢀtHDꢀtimingꢀisꢀreferencedꢀ  
toꢀtheꢀrisingꢀorꢀfallingꢀedgeꢀofꢀtheꢀsignalꢀthatꢀterminatesꢀtheꢀWrite.  
2.ꢀ TestedꢀwithꢀOEꢀHIGHꢀforꢀaꢀminimumꢀofꢀ4ꢀnsꢀbeforeꢀWEꢀ=ꢀLOWꢀtoꢀplaceꢀtheꢀI/OꢀinꢀaꢀHIGH-Zꢀstate.  
3.ꢀ WEꢀmayꢀbeꢀheldꢀLOWꢀacrossꢀmanyꢀaddressꢀcyclesꢀandꢀtheꢀLB,ꢀUBꢀpinsꢀcanꢀbeꢀusedꢀtoꢀcontrolꢀtheꢀWriteꢀfunction.  
10ꢀ  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. F  
12/15/2011