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IS61LV25616AL-12TI 参数 Datasheet PDF下载

IS61LV25616AL-12TI图片预览
型号: IS61LV25616AL-12TI
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×16高速异步静态CMOS与3.3V供电的RAM [256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 16 页 / 382 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS61LV25616AL
AC WAVEFORMS
READ CYCLE NO. 1
(1,2)
(Address Controlled) (CE = OE = V
IL
,
UB
or LB
= V
IL
)
t
RC
ADDRESS
t
OHA
D
OUT
PREVIOUS DATA VALID
t
AA
t
OHA
DATA VALID
READ1.eps
READ CYCLE NO. 2
(1,3)
t
RC
ADDRESS
t
AA
OE
t
OHA
t
HZOE
t
DOE
CE
t
LZOE
t
LZCE
t
ACE
t
HZCE
LB, UB
D
OUT
HIGH-Z
t
LZB
t
BA
t
RC
DATA VALID
t
HZB
Supply
Current
V
DD
t
PU
50%
t
PD
50%
I
CC
I
SB
UB_CEDR2.eps
Notes:
1.
WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE, UB, or LB = V
IL
.
3. Address is valid prior to or coincident with CE LOW transition.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
12/15/2011
7