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IS61LV25616AL-12T 参数 Datasheet PDF下载

IS61LV25616AL-12T图片预览
型号: IS61LV25616AL-12T
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×16高速异步静态CMOS与3.3V供电的RAM [256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY]
分类和应用:
文件页数/大小: 16 页 / 382 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS61LV25616AL
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
t
rc
t
aa
t
oHa
t
ace
t
Doe
t
Hzoe
(2)
t
Lzoe
(2)
t
Hzce
(2
t
Lzce
(2)
t
ba
t
Hzb
(2)
t
Lzb
(2)
t
Pu
t
PD
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE Access Time
OE Access Time
OE to High-Z Output
OE to Low-Z Output
CE to High-Z Output
CE to Low-Z Output
LB, UB Access Time
LB, UB to High-Z Output
LB, UB to Low-Z Output
Power Up Time
Power Down Time
-10
Min. Max.
10 —
— 10
2
— 10
4
4
0
0
4
3
4
0
3
0
0
— 10
-12
Min. Max.
12 —
— 12
2
— 12
5
5
0
0
6
3
5
0
4
0
0
— 12
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of
1.
0V to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage.
Notes:
AC TEST LOADS
319
3.3V
OUTPUT
30 pF
Including
jig and
scope
353
319
3.3V
OUTPUT
5 pF
Including
jig and
scope
353
Figure 1
Figure 2
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing and Reference Level
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1 and 2
6
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
12/15/2011