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IS61LV256-15T-TR 参数 Datasheet PDF下载

IS61LV256-15T-TR图片预览
型号: IS61LV256-15T-TR
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 32KX8, 15ns, CMOS, PDSO28, 0.450 INCH, PLASTIC, TSOP1-28]
分类和应用: 静态存储器光电二极管内存集成电路
文件页数/大小: 11 页 / 75 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS61LV256
PIN CONFIGURATION
28-Pin SOJ
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VDD
WE
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
ISSI
PIN CONFIGURATION
28-Pin TSOP (Type I)
OE
A11
A9
A8
A13
WE
VDD
A14
A12
A7
A6
A5
A4
A3
22
23
24
25
26
27
28
1
2
3
4
5
6
7
21
20
19
18
17
16
15
14
13
12
11
10
9
8
®
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
PIN DESCRIPTIONS
A0-A14
CE
OE
WE
I/O0-I/O7
V
DD
GND
Address Inputs
Chip Enable Input
Output Enable Input
Write Enable Input
Input/Output
Power
Ground
TRUTH TABLE
Mode
Not Selected
(Power-down)
Output Disabled
Read
Write
WE
X
H
H
L
CE
H
L
L
L
OE
X
H
L
X
I/O Operation
High-Z
High-Z
D
OUT
D
IN
V
DD
Current
I
SB
1
, I
SB
2
I
CC
I
CC
I
CC
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
DD
V
TERM
T
STG
P
D
I
OUT
Parameter
Power Supply Voltage Relative to GND
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
DC Output Current
Value
–0.5 to +4.6
–0.5 to +4.6
–65 to +150
1
±20
Unit
V
V
°C
W
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or any
other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. K
06/06/05