IC61C1024
IC61C1024L
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
–0.5 to +7.0
–55 to +125
–65 to +150
1.5
Unit
V
VTERM
TBIAS
TSTG
PT
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
°C
°C
W
Power Dissipation
IOUT
DC Output Current (LOW)
20
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol
CIN
Parameter
Input Capacitance
Conditions
VIN = 0V
Max.
5
Unit
pF
COUT
Notes:
Output Capacitance
VOUT = 0V
7
pF
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
VCC = Min., IOH = –4.0 mA
Min.
2.4
Max.
—
Unit
V
VOH
VOL
VIH
VIL
ILI
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage(1)
Input Leakage
VCC = Min., IOL = 8.0 mA
—
0.4
V
2.2
VCC + 0.5
0.8
V
–0.3
V
GND ≤ VIN ≤ VCC
Com.
Ind.
–2
–5
2
5
µA
ILO
Output Leakage
GND ≤ VOUT ≤ VCC
Outputs Disabled
Com.
Ind.
–2
–5
2
5
µA
Note:
1. VIL = –3.0V for pulse width less than 10 ns.
4
Integrated Circuit Solution Inc.
AHSR008-0B 10/18/2001
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
