欢迎访问ic37.com |
会员登录 免费注册
发布采购

IC41LV16105S-50T 参数 Datasheet PDF下载

IC41LV16105S-50T图片预览
型号: IC41LV16105S-50T
PDF下载: 下载PDF文件 查看货源
内容描述: [Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, TSOP2-50/44]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 18 页 / 198 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
 浏览型号IC41LV16105S-50T的Datasheet PDF文件第10页浏览型号IC41LV16105S-50T的Datasheet PDF文件第11页浏览型号IC41LV16105S-50T的Datasheet PDF文件第12页浏览型号IC41LV16105S-50T的Datasheet PDF文件第13页浏览型号IC41LV16105S-50T的Datasheet PDF文件第14页浏览型号IC41LV16105S-50T的Datasheet PDF文件第15页浏览型号IC41LV16105S-50T的Datasheet PDF文件第17页浏览型号IC41LV16105S-50T的Datasheet PDF文件第18页  
IC41C16105S  
IC41LV16105S  
CBR REꢀRESH CYCLE (Addresses; WE, OE = DON'T CARE)  
t
RP  
t
RAS  
t
RP  
t
RAS  
RAS  
t
CHR  
tCHR  
t
RPC  
CP  
tRPC  
t
t
CSR  
tCSR  
UCAS/LCAS  
I/O  
Open  
HIDDEN REꢀRESH CYCLE(1) (WE = HIGH; OE = LOW)  
t
RAS  
t
RAS  
t
RP  
RAS  
t
CRP  
t
RCD  
t
RSH  
tCHR  
UCAS/LCAS  
t
AR  
t
RAD  
t
RAL  
t
ASR  
t
RAH  
tCAH  
t
ASC  
ADDRESS  
Row  
Column  
t
AA  
t
RAC  
(2)  
OFF  
t
t
CAC  
t
CLZ  
Open  
Open  
Valid Data  
I/O  
OE  
t
OE  
tOD  
t
ORD  
Dont Care  
Notes:  
1. A Hidden Refresh may also be performed after a Write Cycle. In this case, WE = LOW and OE = HIGH.  
2. tOꢀꢀ is referenced from rising edge of RAS or CAS, whichever occurs last.  
16  
Integrated Circuit Solution Inc.  
DR011-0A 05/23/2001