IC41C16105
IC41LV16105
.unctional Description
The IC41C16105 and IC41LV16105 is a CMOS DRAM
optimized for high-speed bandwidth, low power
applications. During READ or WRITE cycles, each bit is
uniquely addressed through the 10 address bits. These
are entered ten bits (A0-A9) at a time. The row address is
latched by the Row Address Strobe (RAS). The column
address is latched by the Column Address Strobe (CAS).
RAS
is used to latch the first ten bits and
CAS
is used the
latter ten bits.
The IC41C16105 and IS41LV16105 has two
CAS
controls,
LCAS
and
UCAS.
The
LCAS
and
UCAS
inputs internally
generates a
CAS
signal functioning in an identical manner
to the single
CAS
input on the other 1M x 16 DRAMs. The
key difference is that each
CAS
controls its corresponding
I/O tristate logic (in conjunction with
OE
and
WE
and
RAS).
LCAS
controls I/O0 through I/O7 and
UCAS
controls I/O8
through I/O15.
The IC41C16105 and IC41LV16105
CAS
function is de-
termined by the first
CAS
(LCAS or
UCAS)
transitioning
LOW and the last transitioning back HIGH. The two
CAS
controls give the IC41C16105 and IC41LV16105 both
BYTE READ and BYTE WRITE cycle capabilities.
Write Cycle
A write cycle is initiated by the falling edge of
CAS
and
WE,
whichever occurs last. The input data must be valid at or
before the falling edge of
CAS
or
WE,
whichever occurs
last.
Refresh Cycle
To retain data, 1,024 refresh cycles are required in each
16 ms period. There are two ways to refresh the memory.
1. By clocking each of the 1,024 row addresses (A0
through A9) with
RAS
at least once every 16 ms. Any
read, write, read-modify-write or
RAS-only
cycle re-
freshes the addressed row.
2. Using a
CAS-before-RAS
refresh cycle.
CAS-before-
RAS
refresh is activated by the falling edge of
RAS,
while holding
CAS
LOW. In
CAS-before-RAS
refresh
cycle, an internal 10-bit counter provides the row
addresses and the external address inputs are ignored.
CAS-before-RAS
is a refresh-only mode and no data
access or device selection is allowed. Thus, the output
remains in the High-Z state during the cycle.
Memory Cycle
A memory cycle is initiated by bring
RAS
LOW and it is
terminated by returning both
RAS
and
CAS
HIGH. To
ensures proper device operation and data integrity any
memory cycle, once initiated, must not be ended or
aborted before the minimum t
RAS
time has expired. A new
cycle must not be initiated until the minimum precharge
time t
RP
, t
CP
has elapsed.
Power-On
After application of the V
CC
supply, an initial pause of
200 µs is required followed by a minimum of eight initial-
ization cycles (any combination of cycles containing a
RAS
signal).
During power-on, it is recommended that
RAS
track with
V
CC
or be held at a valid V
IH
to avoid current surges.
Read Cycle
A read cycle is initiated by the falling edge of
CAS
or
OE,
whichever occurs last, while holding
WE
HIGH. The
column address must be held for a minimum time specified
by t
AR
. Data Out becomes valid only when t
RAC
, t
AA
, t
CAC
and t
OEA
are all satisfied. As a result, the access time is
dependent on the timing relationships between these
parameters.
S2-4
Integrated Circuit Solution Inc.
DR014-0A 06/07/2001
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
